파트넘버.co.kr TH58BVG3S0HBAI6 데이터시트 검색

TH58BVG3S0HBAI6 전자부품 데이터시트



TH58BVG3S0HBAI6 전자부품 회로 및
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TH58BVG3S0HBAI6  

Toshiba
Toshiba

TH58BVG3S0HBAI6

8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PR




관련 부품 TH58BVG3S0HBA 상세설명

TH58BVG3S0HBAI4  

  
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 6



Toshiba
Toshiba

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