파트넘버.co.kr TGF2023-20 데이터시트 검색

TGF2023-20 전자부품 데이터시트



TGF2023-20 전자부품 회로 및
기능 검색 결과



TGF2023-20  

TriQuint Semiconductor
TriQuint Semiconductor

TGF2023-20

100 Watt Discrete Power GaN on SiC HEMT

TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0




관련 부품 TGF2023- 상세설명

TGF2023-02  

  
12 Watt Discrete Power GaN on SiC HEMT

TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions:



TriQuint Semiconductor
TriQuint Semiconductor

PDF



TGF2023-10  

  
50 Watt Discrete Power GaN on SiC HEMT

TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions:



TriQuint Semiconductor
TriQuint Semiconductor

PDF



TGF2023-05  

  
25 Watt Discrete Power GaN on SiC HEMT

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensio



TriQuint Semiconductor
TriQuint Semiconductor

PDF



TGF2023-2-01  

  
6 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 38 dBm Nominal PSAT at 3 GHz • 71.6% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA



TriQuint Semiconductor
TriQuint Semiconductor

PDF



TGF2023-01  

  
6 Watt Discrete Power GaN on SiC HEMT

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dime



TriQuint Semiconductor
TriQuint Semiconductor

PDF



TGF2023-2-20  

  
90 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE 19.2 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ =



TriQuint
TriQuint

PDF




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