Datasheet TGA4516-TS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TGA4516-TS	Ka-Band 2W Power Amplifier Ka-Band 2W Power Amplifier Key Features • • • • • • TGA4516-TS 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: 2.921 x 2.438 mm Primary Applications	TriQuint Semiconductor

TGA4516 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TGA4516-TS	Ka-Band 2W Power Amplifier Ka-Band 2W Power Amplifier Key Features • • • • • • TGA4516-TS 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: 2.921 x 2.438 mm Pr	TriQuint Semiconductor
TGA4516	Ka-Band 2W Power Amplifier Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier Key Features • • • • • • TGA4516 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Chip	TriQuint Semiconductor

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