|
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF3420 N-Channel Enhancement Mode Field Effect Transistor General Description The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) r
TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qHigh sensitive Gate trigger Current: IGT=0.1mA max External Dimensions (Unit: mm) 16.7max 0.2 3.0±0.2 8.8± 10.4max 5.0max 2.1m
TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max External Dimensions (Unit: mm) 16.7max 3.0±0.2 8.8±0.2 10.4max 5.0max 2.1max φ 3.75±0.1 a b ±0.15 1.35 1
TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max External Dimensions (Unit: mm) 16.7max 3.0±0.2 8.8±0.2 10.4max 5.0max 2.1max φ 3.75±0.1 a b ±0.15 1.35 1
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |