TC7SH86FU
Toshiba
EXCLUSIVE OR GATETC7SH86F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH86F, TC7SH86FU
2-Input EXCLUSIVE OR Gate
Features
• High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High
TC7SH86F
EXCLUSIVE OR GATETC7SH86F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH86F, TC7SH86FU
2-Input EXCLUSIVE OR Gate
Features
• High speed operation : tpd = 4.8 ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (
Toshiba
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