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TC7SH04FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH04FS INVERTER Features High speed: tpd = 3.8 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input. Wide oper
TC7SH02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02F, TC7SH02FU 2-Input NOR Gate Features • High Speed Operation : tpd = 3.6 ns (typ.) at VCC = 5 V, 15 pF • Low Power Dissipation : ICC = 2μA (max) at Ta = 25°C • Balanced Propagation Delays : tpLH ≒ tpHL • High
TC7SH02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02F, TC7SH02FU 2-Input NOR Gate Features • High Speed Operation : tpd = 3.6 ns (typ.) at VCC = 5 V, 15 pF • Low Power Dissipation : ICC = 2μA (max) at Ta = 25°C • Balanced Propagation Delays : tpLH ≒ tpHL • High
TC7SH00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00F, TC7SH00FU 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • 5.5-V tolerant inputs • Balanced propagation delays
TC7SH08FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08FS 2-INPUT AND GATE Features High speed: tpd = 4.3 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input. Wide operating voltage r
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08FE TC7SH08FE 2 Input AND Gate Features • Super high speed operation :tPD = 4.3 ns (typ.) @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH = 28% VCC (Min.) • 5.5V toler
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