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TC58NVG2S3ETA00 전자부품 데이터시트



TC58NVG2S3ETA00 전자부품 회로 및
기능 검색 결과



TC58NVG2S3ETA00  

Toshiba
Toshiba

TC58NVG2S3ETA00

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM




관련 부품 TC58NVG2S3ETA 상세설명

TC58NVG2S3ETAI0  

  
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 p



Toshiba
Toshiba

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