TC58NVG2S3ETA00
Toshiba
4 GBIT (512M x 8 BIT) CMOS NAND E2PROMTC58NVG2S3ETA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM
TC58NVG2S3ETAI0
4 GBIT (512M x 8 BIT) CMOS NAND E2PROMTC58NVG2S3ETAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 p
Toshiba
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