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TC58NVG0S3HBAI4 전자부품 데이터시트



TC58NVG0S3HBAI4 전자부품 회로 및
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TC58NVG0S3HBAI4  

Toshiba
Toshiba

TC58NVG0S3HBAI4

1G BIT (128M x 8-BIT) CMOS NAND E2PROM

TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M  8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E




관련 부품 TC58NVG0S3HBA 상세설명

TC58NVG0S3HBAI6  

  
1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

TC58NVG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes �



Toshiba
Toshiba

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