TC58NVG0S3HBAI4
Toshiba
1G BIT (128M x 8-BIT) CMOS NAND E2PROMTC58NVG0S3HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
1G BIT (128M 8 BIT) CMOS NAND E PROM DESCRIPTION
The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E
TC58NVG0S3HBAI6
1G-BIT (128M x 8 BIT) CMOS NAND E2PROMTC58NVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes �
Toshiba
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