TC58DVM92A5TA00
Toshiba
512M-BIT (64M x 8 BITS) CMOS NAND E2PROMTC58DVM92A5TA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) org
TC58DVM92A5TAI0
512M-BIT (64M x 8 BITS) CMOS NAND E2PROMTC58DVM92A5TAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096
Toshiba
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