TC55VBM316AFTN
Toshiba Semiconductor
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOSTC55VBM316AFTN/ASTN40,55
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access m