TC5117400BST
Toshiba Semiconductor
DYNAMIC RAM
TOSHIBA
TC5117400BSJ/BST-60/70
PRELIMINARY
4,194,304 WORD X 4 BIT DYNAMIC RAM
Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon ga
TC5117400BST-60
Toshiba Semiconductor
DRAM
TOSHIBA
TC5117400BSJ/BST-60/70
4,194,304 WORD X 4 BIT DYNAMIC RAM
PRELIMINARY
Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon
TC5117400BST-70
Toshiba Semiconductor
DRAM
TOSHIBA
TC5117400BSJ/BST-60/70
4,194,304 WORD X 4 BIT DYNAMIC RAM
PRELIMINARY
Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon