TC5117400BSJ-60
Toshiba Semiconductor
DRAM
TOSHIBA
TC5117400BSJ/BST-60/70
4,194,304 WORD X 4 BIT DYNAMIC RAM
PRELIMINARY
Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon
TC5117400BSJ-70
DRAM
TOSHIBA
TC5117400BSJ/BST-60/70
4,194,304 WORD X 4 BIT DYNAMIC RAM
PRELIMINARY
Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advan
Toshiba Semiconductor
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