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TC5117400BSJ-60 전자부품 데이터시트



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TC5117400BSJ-60  

Toshiba Semiconductor
Toshiba Semiconductor

TC5117400BSJ-60

DRAM

TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon




관련 부품 TC5117400BSJ- 상세설명

TC5117400BSJ-70  

  
DRAM

TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advan



Toshiba Semiconductor
Toshiba Semiconductor

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