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TC3131 REV2_20040412 2.4 GHz 1W MMIC FEATURES • • • • • P-1 dB: 30 dBm Small Signal Gain: 28 dB Power Added Efficiency: 32 % IP3: 39 dBm Bias Condition: 400 mA @ 7 V PHOTO ENLARGEMENT GND Vg GND RF IN RF OUT RF OUT Vd GND DESCRIPTION The TC3131 is a 2 stage PHEMT MMIC power amplifier. It
LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High of
LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us www.Dat
TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES • P-1 dB: 33 dBm • Small Signal Gain: 29 dB • Power Added Efficiency: 31 % • IP3: 42 dBm • DC Bias: 800 mA @ 7 V Vg PHOTO ENLARGEMENT GND RF OUT RF OUT Vd RF IN RF IN GND DESCRIPTION The TC3141 is a 2 stage PHEMT MMIC power amplifier. It i
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