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www.DataSheet4U.net - Preliminary Datasheet - TC2998F PRE.3_01/21/2008 2.7-2.9GHz 20W Packaged GaAs Power FETs FEATURES 20 W Typical Power 10 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Test
www.DataSheet4U.net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs FEATURES 20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Te
www.DataSheet4U.net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs FEATURES 16 W Typical Power at 3.5 GHz 9 dB Typical Linear Power Gain at 3.5 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100
www.DataSheet4U.net TC2997C PRE3_20050418 Preliminary 2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 2.1 GHz • 12 dB Typical Linear Power Gain at 2.1 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • S
www.DataSheet4U.net TC2997B REV0_20040412 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20W Typical Power at 1.9 GHz • 12 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for Hi
www.DataSheet4U.net TC2997A PRE4_20050708 Preliminary 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 1.6 GHz • 13 dB Typical Linear Power Gain at 1.6 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • S
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