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www.DataSheet4U.net TC2997A PRE4_20050708 Preliminary 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 1.6 GHz • 13 dB Typical Linear Power Gain at 1.6 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • S
www.DataSheet4U.net TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.9 GHz • 13 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for Hi
TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
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LCD Module User Manual Customer : MASS PRODUCTION CODE : TC2004A-03WA0 DRAWING NO. : m-TC2004A-03WA0_A00 Approved By Customer: Date: Approved By Checked By Prepared By Vatronix Holdings Limited ADD 5F,No.10 Blg,Wenguang Industrial Zone,XiLi,Nanshan District,Shenzhen,China TEL: 0086-755-832
SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Absolute Maximum Ratings Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Value 500 -65 to +175 +175 Units mW °C °C L : Logo Device
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