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TC220E 전자부품 데이터시트



TC220E 전자부품 회로 및
기능 검색 결과



TC220E  

Toshiba
Toshiba

TC220E

(TC220C/E) DRAM Core

TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applic




관련 부품 TC22 상세설명

TC22V  

  
500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators

SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Absolute Maximum Ratings Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Value 500 -65 to +175 +175 Units mW °C °C L : Logo Device



Tak Cheong
Tak Cheong

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TC221  

  
Small-Format CCD Image Sensors (Rev. C)



Texas Instruments
Texas Instruments

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TC220LL  

  
Toroidal Chokes Low Loss

RoHS Toroidal Chokes Low Loss TC220LL Dimensions: Inches (mm) 0.55 MAX (13.97) 1.1 MAX (27.94) Tin lead to coil 0.50 (13.97) C A B Vertical Mount Horizontal Mount Allied Part Number Inductance Tolerance (µh) (%) @ 1KHZ L(µH) @ I rated IDC (A) DCR (Ω) MAX DIM DIM DIM B C A (Nom) (Nom



Allied Components International
Allied Components International

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TC220LL  

  
Toroidal Chokes Low Loss

RoHS Toroidal Chokes Low Loss TC220LL Dimensions: Inches (mm) 0.55 MAX (13.97) 1.1 MAX (27.94) Tin lead to coil 0.50 (13.97) C A B Vertical Mount Horizontal Mount Allied Part Number Inductance Tolerance (µh) (%) @ 1KHZ L(µH) @ I rated IDC (A) DCR (Ω) MAX DIM DIM DIM B C A (Nom) (Nom



Allied Components International
Allied Components International

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TC2211  

  
Plastic Packaged Low Noise PHEMT GaAs FETs

TC2211 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm



Transcom
Transcom

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TC2201  

  
Plastic Packaged Low Noise PHEMT GaAs FETs

TC2201 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs PHOTO ENLARGEMENT FEATURES • • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm



Transcom
Transcom

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