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TBS6416B4E  

M-tec
M-tec

TBS6416B4E

1M x 16 Bit x 4 Bank Synchronous DRAM

M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchro



TBS6416B4E  

M-tec
M-tec

TBS6416B4E

1M x 16-Bit x 4-Banks SDRAM

M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMO



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