TBS6416B4E
M-tec
1M x 16 Bit x 4 Bank Synchronous DRAMM.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchro
TBS6416B4E
M-tec
1M x 16-Bit x 4-Banks SDRAM
M.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMO