Datasheet TA4012AFE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TA4012AFE	TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage	Toshiba Semiconductor

TA4012 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TA4012FU	UHF WIDE BAND AMPLIFIER APPLICATIONS TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5~2.2 V Pin Assignment Absolute Maximum Ratings (Ta =	Toshiba Semiconductor
TA4012F	UHF WIDE BAND AMPLIFIER APPLICATIONS	Toshiba Semiconductor
TA4012AFE	TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C) Characteris	Toshiba Semiconductor

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