Datasheet T435-XXX Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	T435-xxx	4A TRIACS ® T4 Series 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800 5 to 35 Unit A V A2 G A2 A1 A2 mA A1 A2 G A1 A2 G DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series i	ST Microelectronics	triac
2	T435-xxxx	4A TRIACs http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http	JIEJIE MICROELECTRONICS	triac

T43 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	T430QVN01.0	Display Module T430QVN01.0 Product Specification Rev 0.2 Model Name: T430QVN01.0 Issue Date: 2014/09/01 (＊) Preliminary Specifications ( ) Final Specifications Customer Signature Approved By Date AUO Approval By PM Director Date _________________________________ ____________________________________ Note R	AUO	display
2	T4312816A	8M x 16 SDRAM	Taiwan Memory Technology	data
3	T431616A	1M x 16 SDRAM	TM	data
4	T431616B	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and s	TMT	data
5	T431616C	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Aut	TMT	data
6	T431616D	(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4,	TMT	data
7	T431616E	(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4,	TMT	data

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Número de pieza	Descripción	Fabricantes	PDF
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