T431616D
TMT
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAMtm
TE CH
T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Laten
T431616C
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAMtm
• • • • •
TE CH
T431616C
SDRAM
FEATURES
3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Aut
TMT
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T431616B
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAMtm
• • • • • • • • •
TE CH
T431616B
SDRAM
FEATURES
+2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and s
TMT
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T431616E
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAMtm
TE CH
T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4,
TMT
PDF