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Datasheet SI8404DB Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SI8404DB   N-Channel 1.5-V (G-S) MOSFET

N-Channel 1.5-V (G-S) MOSFET Si8404DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.033 at VGS = 2.5 V 8 0.035 at VGS = 1.8 V 0.043 at VGS = 1.5 V ID (A)a 12.2 11.6 11.2 10.2 Qg (Typ.) 20 nC FEATURES • TrenchFET® Power MOSFET • Industry First 1.5 V Rat
 Vishay
Vishay		 datasheet SI8404DB pdf

SI840 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SI8406DB

N-Channel 20 V (D-S) MOSFET

Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.033 at VGS = 4.5 V 20 0.037 at VGS = 2.5 V 0.042 at VGS = 1.8 V ID (A) 16e 16e 15 7.5 nC Qg (Typ.) • • • • TrenchFET® Power MOSFET Ultra-small 1.5 mm x 1 mm Max
 Vishay
Vishay		 datasheet pdf - Vishay
SI8401DB-T1

P-Channel 20-V (D-S) MOSFET

Si8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −4.9 −4.1 rDS(on) (W) 0.065 @ VGS = −4.5 V 0.095 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm)
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix
SI8401DB

P-Channel 20-V (D-S) MOSFET

Si8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −4.9 −4.1 rDS(on) (W) 0.065 @ VGS = −4.5 V 0.095 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm)
 Vishay Siliconix
Vishay Siliconix		 datasheet pdf - Vishay Siliconix


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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