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Datasheet SI5484DU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SI5484DU | N-Channel 20-V (D-S) MOSFET N-Channel 20-V (D-S) MOSFET
Si5484DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 4.5 V 20
0.021 at VGS = 2.5 V
ID (A)a 12 12
Qg (Typ.) 16.5 nC
PowerPAK ChipFET Single
1 2
D3
DD
4
8D 7D
6S
D G
S
5
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • New |
 Vishay |
 |
| 2 | SI5484DU | N-Channel 20-V (D-S) MOSFET N-Channel 20-V (D-S) MOSFET
Si5484DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 4.5 V 20
0.021 at VGS = 2.5 V
ID (A)a 12 12
Qg (Typ.) 16.5 nC
PowerPAK ChipFET Single
1 2
D3
DD
4
8D 7D
6S
D G
S
5
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • New |
Vishay |
|
| 1 | SI5484DU-RC | R-C Thermal Model Parameters
Si5484DU_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When i |
 Vaishali Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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