Datasheet SW7N65B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SW7N65B	N-channel TO-220F MOSFET SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F SW7N65B N-channel TO-220F MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.4 ohm 1 2 3 1 3 2 General Description 1. Gate 2. Drain 3. Source	SEMIPOWER

SW7N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SW7N65	N-channel MOSFET SAMWIN TO-220F TO-220 SW7N65 N-channel MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 1.32 Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate 2. Drain 3. Sourc	SAMWIN
SW7N60	N-Channel MOSFET SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W SW7N60 General Description This power MOSFET is produced in CHMC with advanced VDMOS process, planar	SAMWIN
SW7N60A	N-channel MOSFET SAMWIN SW7N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.0A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. S	SAMWIN

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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