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Datasheet SW12N65B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SW12N65B   N-channel TO-220F MOSFET

SAMWIN TO-220F SW12N65B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.85 Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source General Desc
 SEMIPOWER
SEMIPOWER		 datasheet SW12N65B pdf

SW12N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SW12N65

N-channel MOSFET

SAMWIN TO-220F TO-220 SW12N6 5 N-channel MOSFET BVDSS : 650V ID : 12.0A RDS(ON) : 0.8ohm 1 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.8 Ω)@VGS=10V ■ Gate Charge (Typ 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 2 1. Gate 2. Drain 3. Sou
 SAMWIN
SAMWIN		 datasheet pdf - SAMWIN
SW12N65B

N-channel TO-220F MOSFET

SAMWIN TO-220F SW12N65B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.85 Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3.
SEMIPOWER
SEMIPOWER		 datasheet pdf - SEMIPOWER
SW12N60

N-channel MOSFET

SAMWIN SW12N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.0A RDS(ON) : 0.7ohm 3 2 1. Gate 2. Drain 3. Sour
 SAMWIN
SAMWIN		 datasheet pdf - SAMWIN


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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