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Elektronische Bauelemente SUF11M~SUF18M 50 ~ 600 V 1.0 Amp Surface Mount Super Fast Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant DESCRIPTIONS z Batch process design, excellent power dissipation offers better reverse leakage current and thermal re
Ultrafast Switching Surface Mount Si-Rectifiers Version 2004-10-01 w 5.0 w Type Typ 0.5 a t a D . w 2.5 Sh t e e 4U .c SUF4001 ... SUF4007 m o Ultraschnelle Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperr
www.vishay.com SUP90220E Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET TO-220AB Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 200 0.0216 0.0235 31.6 64 Single FEATURES • ThunderFET® power
SUV85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 85 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0105 @ VGS = 10 V 0.012 @ VGS = 4.5 V APPLICATIONS D DC/DC Primary Side Switch D TO-262 1 2
SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V ID (A) –15 –10 –10.5 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP15P01-
SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation APPLICATIONS D
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