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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220 TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ,
STU10N20 Sa mHop Microelectronics C orp. STD10N20Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 200V 306 @ VGS=10V 8A 328 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO
STU10N10 Sa mHop Microelectronics C orp. STD10N10Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 620 @ VGS=10V 5A 721 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO
STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data 7$% DPAK 7$% TO-220 TO-220FP 7$% IPAK Features Order code VDS @TJ max. STD10NM60N STF10
w w a D . w S a t e e h U 4 t m o .c STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™ III MOSFET VDSS 700 V 700 V RDS(on) <0.75Ω <0.75Ω ID 9.4 A 9.4 A TYPE STU10NC70Z STU10NC70ZI s s s s s s TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv
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