Datasheet STQ1NC60R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STQ1NC60R	N-CHANNEL MOSFET STQ1NC60R N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMESH™II Power MOSFET TYPE STQ1NC60R s s s s s VDSS 600 V RDS(on) < 15 Ω ID 0.3 A TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 BULK	ST Microelectronics

STQ1NC Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STQ1NC60R	N-CHANNEL MOSFET STQ1NC60R N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMESH™II Power MOSFET TYPE STQ1NC60R s s s s s VDSS 600 V RDS(on) < 15 Ω ID 0.3 A TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE M	ST Microelectronics
STQ1NC45	N-CHANNEL MOSFET STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s VDSS 450 V 450 V RDS(on) < 4.5 Ω < 4.5 Ω ID 1.5 A 0.5 A Pw 30 W 3.1 W 3 2 1 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CA	ST Microelectronics
STQ1NC45R-AP	N-channel MOSFET STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP ■ ■ ■ ■ VDSS 450V 450V RDS(on) <4.5Ω <4.5Ω ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capab	ST MICROELECTRONICS

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Número de pieza	Descripción	Fabricantes	PDF
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