STPSC806
ST Microelectronics
Schottky Barrier 600 V power Schottky silicon carbide diode
STPSC806
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is a
STPSC806D
STMicroelectronics
600 V power Schottky silicon carbide diode
STPSC806D
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is