STD10N10 전자부품 데이터시트

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY™ Power MOSFET in a DPAK package Datasheet - production data Features TAB 3 1 DPAK Order code STD10NF30 VDS 300 V RDS(on)max. 0.33 Ω ID 10 A • Designed for automotive applications and AEC-Q101 qualified • Gate

N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STD10NF10 s s s STD10NF10 VDSS 100 V RDS(on) <0.13 Ω ID 13 A s s TYPICAL RDS(on) = 0.115Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE

STU10N20 Sa mHop Microelectronics C orp. STD10N20Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 200V 306 @ VGS=10V 8A 328 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO

N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L s s STD10NF06L VDSS 60V RDS(on) <0.12Ω ID 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 1 3 DESCRIPTION This MOSFET series realized with S

Green Product STU10N25 STD10N25 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 250V ID 9A R DS(ON) (m Ω) Max 258 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-