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ST230C 전자부품 데이터시트



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기능 검색 결과



ST230C  

IRF
IRF

ST230C

PHASE CONTROL THYRISTORS Hockey Puk Version

Bulletin I25162 rev. D 04/03 ST230C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) 410A Typical Applications DC motor controls Controlled




관련 부품 ST23 상세설명

ST232E  

  
ESD PROTECTED 5V RS-232 TRANSCEIVER

® ST202E ST232E ± 15KV ESD PROTECTED 5V RS-232 TRANSCEIVER s s s s ESD PROTECTION FOR RS-232 I/O PINS: ± 15 KV HUMAN BODY MODEL GUARANTEED 120 kbps DATE RATE GUARANTEED SLEW RATE RANGE 3 to 30V/µs OPERATE FROM A SINGLE 5V POWER SUPPLY DESCRIPTION The ST202E/ST232E are a 2 driver 2 receiver



ST Microelectronics
ST Microelectronics

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ST2310  

  
Self Drive Piezo Transducer

Self Drive Piezo Transducer ST2360 Series Parameters Min Sound Pressure Level at 10cm Rated Voltage Operating Voltage Resonance Frequency Typical Operating Current Operating Temperature Case Material Weight Value applying rated voltage with recommended circuit + 220K Units dBA Vdc Vdc Hz mA °C g



SOUND COMPONENTS
SOUND COMPONENTS

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ST2305A  

  
P Channel Enhancement Mode MOSFET

P Channel Enhancement Mode MOSFET ST2305A -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devic



Stanson Technology
Stanson Technology

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ST2304  

  
N Channel Enchancement Mode MOSFET

N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION ST2304 The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resis



Stanson Technology
Stanson Technology

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ST2303  

  
P Channel Enchancement Mode MOSFET

P Channel Enchancement Mode MOSFET -1.7A DESCRIPTION ST2303 The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resi



Stanson Technology
Stanson Technology

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ST2301A  

  
P Channel Enhancement Mode MOSFET

P Channel Enhancement Mode MOSFET ST2301A -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices



Stanson Technology
Stanson Technology

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