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® ST202E ST232E ± 15KV ESD PROTECTED 5V RS-232 TRANSCEIVER s s s s ESD PROTECTION FOR RS-232 I/O PINS: ± 15 KV HUMAN BODY MODEL GUARANTEED 120 kbps DATE RATE GUARANTEED SLEW RATE RANGE 3 to 30V/µs OPERATE FROM A SINGLE 5V POWER SUPPLY DESCRIPTION The ST202E/ST232E are a 2 driver 2 receiver
Self Drive Piezo Transducer ST2360 Series Parameters Min Sound Pressure Level at 10cm Rated Voltage Operating Voltage Resonance Frequency Typical Operating Current Operating Temperature Case Material Weight Value applying rated voltage with recommended circuit + 220K Units dBA Vdc Vdc Hz mA °C g
P Channel Enhancement Mode MOSFET ST2305A -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devic
N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION ST2304 The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resis
P Channel Enchancement Mode MOSFET -1.7A DESCRIPTION ST2303 The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resi
P Channel Enhancement Mode MOSFET ST2301A -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices
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