|
Main Product Characteristics: VDSS RDS(on) 800V 1.3Ω (typ.) ID 8A Features and Benefits: TO-220F Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse
Main Product Characteristics: VDSS RDS(on) 800V 1.38Ω(typ.) ID 8A Features and Benefits: TO-220 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse
DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -4.4A RDS(ON)
Main Product Characteristics: VDSS 85V RDS(on) ID 7mohm(typ.) 80A Features and Benefits: TO220 Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra
SSF8421 GENERAL FEATURES ●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V ●P-Channel VDS = -20V,ID = -3.5A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mou
Main Product Characteristics: VDSS 18V RDS(on) 20mohm(typ.) ID 4.5A TSSOP-8 Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power managemen
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |