SPI80N08S2-07R
Infineon Technologies
OptiMOS Power-TransistorSPI80N08S2-07R OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 75 7.3 80
P- TO262 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature
• Avalanche rated • dv/dt rated • Integrated ga
SPI80N08S2-07
Power-Transistor
SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
75 7.1 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated
Infineon Technologies
PDF
SPI80N08S2-07
OptiMOS Power-Transistor
SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
75 7.1 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated
Infineon Technologies
PDF