SPI21N10
Infineon Technologies
SIPMOS Power-TransistorPreliminary data
SPI21N10 SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 80 21
P-TO220-3-1
V m
SPI21N50C3
Power TransistorSPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
Infineon Technologies
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