SEMIX303GD12VC
Semikron
High short circuit capabilitySEMiX303GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 448 342 300 900 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 327 244 300
SEMIX303GD12T4C
Trench IGBT ModulesSEMiX 303GD12T4c
Absolute Maximum Ratings Symbol Conditions IGBT
1 178 :
- () * - '2) * 1786+1
4.. < : = (. <
> '(.. - '2) * 1@786+1@
- '). * () * 5. *
()*/
# Values
'(.. 34) 64. 9.. ; (. '.
Units
Semikron International
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SEMIX303GD12E4C
Trench IGBT ModulesSEMiX303GD12E4c
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 466 359 300 900 -20 ... 20 10 -40 ... 175 338 252 300 IFRM = 3x
Semikron International
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