SDM4435
SamHop
P-Channel Enhancement Mode MOS FETS DM4435
P -C hannel E nhancement Mode MOS FE T
J ul.27 2004 ver1.1
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
-30V
-8A
20 @ VGS = -10V 35 @ VGS = -4.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S urf
SDM4410
N-Channel Enhancement Mode Field Effect TransistorGreen Product
S DM4410
Mar.01,2006 ver1.2
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m Ω ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
13.5 @ V G S = 10V 20 @ V G S = 4.5V
SamHop
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