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SDD10N01 thru SDD10N07 ® Pb Free Plating Product SDD10N01 thru SDD10N07 Pb 10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes Features Latest&matured mesa technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High su
S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 20A R DS (ON) S uper high dense cell design for low R DS (ON ). 25 @ V G S = 4.5V 35 @ V G S = 2.7V R ugged and reliable
3 2 1 1 SDD10N01 SDD10N02 SDD10N03 SDD10N04 SDD10N05 SDD10N06 SDD10N07 VRSM V 50 100 200 400 600 800 1000 SDD10 Discrete Diodes Dimensions TO-220AB 23 VRRM V 50 100 200 400 600 800 1000 Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.
3 2 1 1 SDD10N01 SDD10N02 SDD10N03 SDD10N04 SDD10N05 SDD10N06 SDD10N07 VRSM V 50 100 200 400 600 800 1000 SDD10 Discrete Diodes Dimensions TO-220AB 23 VRRM V 50 100 200 400 600 800 1000 Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.
SDD10N01 thru SDD10N07 ® Pb Free Plating Product SDD10N01 thru SDD10N07 Pb 10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes Features Latest&matured mesa technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High su
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