SD56150
ST Microelectronics
RF POWER TRANSISTORS The LdmoST FAMILYSD56150
RF POWER TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE • INTE
SD56120
RF POWER TRANSISTORSSD56120
RF power transistor, the LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package
Description
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power trans
ST Microelectronics
PDF
SD56120M
RF POWER TRANSISTORSSD56120M
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability ■ Common source configuration Push-pull
■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■ Internal input matching
Description
The S
STMicroelectronics
PDF
SD5610
(SD5600 / SD5610) Optoschmitt DetectorSD5600/5610
Optoschmitt Detector
FEATURES • TO-46 metal can package
• 6¡ (nominal) acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible • Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to SE3450/5450, SE3455/5455 and SE3
Honeywell Sensing
PDF