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Datasheet SCT30N120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | SCT30N120 | Silicon carbide Power MOSFET SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
Very high operating temperature capability (TJ = 200 °C)
Very fast and robust intrinsic |
STMicroelectronics |
SCT30N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
SCT30N120 | Silicon carbide Power MOSFET |
STMicroelectronics |
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Número de pieza | Descripción | Fabricantes | |
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