SCS215AJ
ROHM Semiconductor
SiC Schottky Barrier DiodeSCS215AJ
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
LPT(L)
(1)
(2)
(3) (4)
lInner circuit
(1)
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2)
SCS215AM
SiC Schottky Barrier DiodeSCS215AM
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
TO-220FM
(1)
(2)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2) Anode
(1)
(2)
lPackaging specifications Packaging lConstruct
ROHM Semiconductor
PDF
SCS215AG
SiC Schottky Barrier DiodeSCS215AG
SiC Schottky Barrier Diode
lOutline
Datasheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
TO-220AC
(1)
(2)
(3)
lInner circuit
(1)
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Pa
ROHM Semiconductor
PDF
SCS215AE
SiC Schottky Barrier DiodeSCS215AE
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 15A 23nC
TO-247
(1) (2)
(3)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) N/C (2) Cathode (3) Anode
(1) (2) (3)
lPackaging specifications Packagin
ROHM Semiconductor
PDF