파트넘버.co.kr SBT50S 데이터시트 검색

SBT50S 전자부품 데이터시트



SBT50S 전자부품 회로 및
기능 검색 결과



SBT50S  

EIC discrete Semiconductors
EIC discrete Semiconductors

SBT50S

SCHOTTKY BARRIER RECTIFIER DIODES

ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com SBT20S - SBTB0S PRV : 20 -




관련 부품 SBT5 상세설명

SBT5551F  

  
NPN Silicon Transistor

Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F Ordering



AUK corp
AUK corp

PDF



SBT5401  

  
PNP Silicon Transistor

Semiconductor SBT5401 PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551 Ordering



AUK corp
AUK corp

PDF



SBT5401F  

  
PNP Silicon Transistor

Semiconductor SBT5401F PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F Orderin



AUK corp
AUK corp

PDF



SBT50  

  
SCHOTTKY BARRIER RECTIFIER DIODES

SBT20 - SBTB0 PRV : 20 - 100 Volts IO : 2.5 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.28



EIC discrete Semiconductors
EIC discrete Semiconductors

PDF



SBT5551  

  
NPN Silicon Transistor

Semiconductor SBT5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401 Ordering In



AUK corp
AUK corp

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처