S9013-H 전자부품 데이터시트

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR C WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFE lin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 S9013LT1 FEATURES 1. BASE TRANSISTOR£¨NPN £© 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.5 A Collector-base volta

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9013-G S9013-H S9013-I Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collecto

S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 0.1 100 100 25 40 E=20 Vdc, I E= 0 ) 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9013-G S9013-H S9013-I Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collecto

S9013LT1 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC=300mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emi