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S8550MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 850 nm • Optical Ouput Power: 50 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Ab
S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W
S858TA1 Vishay Telefunken BIPMIC® – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose 50 W gain block for narrow and broad band IF and RF amplifiers in commercial and industrial applications. The 50 W level allow
S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W
PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask (code strip) formed on the Si chip surface. Features L/S (Line/Space)=10/10 µm l Uses a light-shielded, non-reflective black slit l Active a
S858TA3 Vishay Telefunken BIPMIC® – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose 50 W gain block for narrow and broad band IF and RF amplifiers in commercial and industrial applications. The 50 W level allow
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