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Datasheet S6306 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S6306 | SiC Schottky Barrier Diode Bare Die S6306
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 15A*1 QC 51nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lA |  ROHM Semiconductor | diode |
S63 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S6301 | SiC Schottky Barrier Diode Bare Die S6301
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 5A*1 QC 17nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction Silicon carbide epitaxial planer type Schottky diode
Data Sheet
(C) Cathode (A) Anode
lAb ROHM Semiconductor diode | | |
| 2 | S6302 | SiC Schottky Barrier Diode Bare Die S6302
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 10A*1 QC 34nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lA ROHM Semiconductor diode | | |
| 3 | S6304 | SiC Schottky Barrier Diode Bare Die S6304
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 20A*1 QC 65nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lA ROHM Semiconductor diode | | |
| 4 | S6305MG | Red Laser Diode S6305MG
TECHNICAL DATA
Red Laser Diode
Features • Lasing Mode Structure: single mode • Peak Wavelength : typ. 635 nm • Optical Ouput Power: 5 mW • Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode
Bottom View
Absolute  Roithner LaserTechnik diode | | |
| 5 | S6306 | SiC Schottky Barrier Diode Bare Die S6306
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 15A*1 QC 51nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lA ROHM Semiconductor diode | | |
| 6 | S6310MG | Infrared Laser Diode S6310MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: single mode • Peak Wavelength : typ. 635 nm • Optical Ouput Power: 10 mW • Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode
Bottom View
Ab Roithner LaserTechnik diode | | |
| 7 | S6370 | Low Power Switching Applications S6370
TOSHIBA THYRISTOR SILICON PLANAR TYPE
S6370
LOW POWER SWITCHING APPLICATIONS (STROBE TRIGGER)
l Repetitive Peak Off-State Voltage : VDRM = 400V l Repetitive Peak Reverse Voltage l Fast Turn On Time l Plastic Mold Package (TO−92) : VRRM = 400V : tgt = 1.5µs Unit in mm
MAXIMUM RATINGS
CHARA  Toshiba data | |
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