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S6301  

ROHM Semiconductor
ROHM Semiconductor

S6301

SiC Schottky Barrier Diode Bare Die

S6301 SiC Schottky Barrier Diode Bare Die VR 1200V IF 5A*1 QC 17nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diod




관련 부품 S63 상세설명

S63HW-XD05  

  
Colour Television Service Manual

Colour Television Module SDI PDP 2K6 S42SD-YD09 (42-inch SD, v5) S42AX-YD02 (42-inch HD, w1) S50HW-YD01 (50-inch HD, w1) S63HW-XD05 (63-inch HD, v4) Contents Page 1. Technical Specifications, Connections, and Chassis Overview 2 2. Safety Instructions, Warnings, and Notes 9 3. Directions For



Philips
Philips

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S63FH-XD01  

  
Wide Plasma Display Module

Global LCD Panel Exchange Center FOR MESSRS: www.panelook.com DATE : 03. Aug. 2007 STD CUSTOMER’S SPECIFICATIONS (APPROVAL) 160cm (63 Inch) Wide Plasma Display Module MODEL : S63FH-XD01 (NTSC,PAL) * This specification will be approved by both STD and Samsung SDI Co.,Ltd. * Please return one of



Samsung
Samsung

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S6310MG  

  
Infrared Laser Diode

S6310MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: single mode • Peak Wavelength : typ. 635 nm • Optical Ouput Power: 10 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Ab



Roithner LaserTechnik
Roithner LaserTechnik

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S6306  

  
SiC Schottky Barrier Diode Bare Die

S6306 SiC Schottky Barrier Diode Bare Die VR 1200V IF 15A*1 QC 51nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lA



ROHM Semiconductor
ROHM Semiconductor

PDF



S6302  

  
SiC Schottky Barrier Diode Bare Die

S6302 SiC Schottky Barrier Diode Bare Die VR 1200V IF 10A*1 QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lA



ROHM Semiconductor
ROHM Semiconductor

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S6305MG  

  
Red Laser Diode

S6305MG TECHNICAL DATA Red Laser Diode Features • Lasing Mode Structure: single mode • Peak Wavelength : typ. 635 nm • Optical Ouput Power: 5 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute



Roithner LaserTechnik
Roithner LaserTechnik

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