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S6200D 전자부품 데이터시트



S6200D 전자부품 회로 및
기능 검색 결과



S6200D  

Digitron Semiconductors
Digitron Semiconductors

S6200D

SILICON CONTROLLED RECTIFIERS

S6200, S6210, S6220 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part nu




관련 부품 S620 상세설명

S6205  

  
SiC Schottky Barrier Diode Bare Die

S6205 SiC Schottky Barrier Diode Bare Die VR 650V IF 12A*1 QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAb



ROHM Semiconductor
ROHM Semiconductor

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S6200M  

  
SILICON CONTROLLED RECTIFIERS

S6200, S6210, S6220 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb p



Digitron Semiconductors
Digitron Semiconductors

PDF



S6200A  

  
SILICON CONTROLLED RECTIFIERS

S6200, S6210, S6220 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb p



Digitron Semiconductors
Digitron Semiconductors

PDF



S6207  

  
SiC Schottky Barrier Diode Bare Die

S6207 SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 QC 23nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAb



ROHM Semiconductor
ROHM Semiconductor

PDF



S6203  

  
SiC Schottky Barrier Diode Bare Die

S6203 SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 QC 31nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lA



ROHM Semiconductor
ROHM Semiconductor

PDF



S6201  

  
SiC Schottky Barrier Diode Bare Die

S6201 SiC Schottky Barrier Diode Bare Die VR 650V IF 6A*1 QC 9nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbso



ROHM Semiconductor
ROHM Semiconductor

PDF




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