S34MS08G2
NAND Flash MemoryS34MS08G2
8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded
Distinctive Characteristics
Density – 8 Gb (4 Gb x 2)
Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or
Cypress Semiconductor
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S34MS02G1
SLC NAND FlashS34MS01G1 S34MS02G1 S34MS04G1
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
Distinctive Characteristics
Density – 1 Gb / 2 Gb / 4 Gb
Architecture – Input / Output Bus Width: 8 bits / 16 bits – Page size: – ×8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – ×
Cypress Semiconductor
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S34MS01G2
1 Gbit/2 Gbit/4 Gbit SLC NAND FlashS34MS01G2 S34MS02G2 S34MS04G2
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
Distinctive Characteristics
Density – 1 Gb / 2 Gb / 4 Gb
Architecture – Input / Output Bus Width: 8 bits / 16 bits – Page size: – x8 1 Gb: (2048 + 64) bytes; 64-byte spare area 2 Gb / 4 Gb: (2048 + 128) b
Cypress Semiconductor
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