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S2308 전자부품 데이터시트



S2308 전자부품 회로 및
기능 검색 결과



S2308  

ROHM Semiconductor
ROHM Semiconductor

S2308

N-channel SiC power MOSFET bare die

S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D)




관련 부품 S23 상세설명

S2353  

  
Diode ( Rectifier )



American Microsemiconductor
American Microsemiconductor

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S23P100D15  

  
Hall Effect Current Sensors

Hall Effect Current Sensors S23P***D15 Series Features: • • • • • • Closed Loop type Current or voltage output Conversion ratio K = 1:2000 Printed circuit board mounting Integrated primary Insulated plastic case according to UL94V0 Advantage: • • • • • • • Excellent accura



Tamura
Tamura

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S23P50D15  

  
Hall Effect Current Sensors

Hall Effect Current Sensors S23P***D15 Series Features: • • • • • • Closed Loop type Current or voltage output Conversion ratio K = 1:2000 Printed circuit board mounting Integrated primary Insulated plastic case according to UL94V0 Advantage: • • • • • • • Excellent accura



Tamura
Tamura

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S230C  

  
STPS230C



ST Microelectronics
ST Microelectronics

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S2305  

  
N-channel SiC power MOSFET bare die

S2305 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 450mW 10A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplic



ROHM Semiconductor
ROHM Semiconductor

PDF



S2301  

  
N-channel SiC power MOSFET bare die

S2301 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 80mW 40A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplica



ROHM Semiconductor
ROHM Semiconductor

PDF




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