S20T100FB
Mospec Semiconductor
Dual Schottky Barrier Power RectifiersMOSPEC
Switchmode Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperatur
S20T100C
Dual Schottky Barrier Power RectifiersMOSPEC
S20T100C
Switchmode Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in
Mospec Semiconductor
PDF
S20T100CB
Dual Schottky Barrier Power RectifiersMOSPEC
Switchmode Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in switching
Mospec Semiconductor
PDF
S20T100F
Dual Schottky Barrier Power RectifiersMOSPEC
S20T100F
Switchmode Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in
Mospec Semiconductor
PDF