S16C35
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERSMOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high freq
S16C50C
SCHOTTKY BARRIER RECTIFIERSSCHOTTKY BARRIER RECTIFIERS
S16C20C thru S16C200C
REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 16.0 Amperes
.055(1.4) .043(1.1)
.026(0.68) .014(0.36)
FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic m
Compact Technology
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S16C150C
SCHOTTKY BARRIER RECTIFIERSSCHOTTKY BARRIER RECTIFIERS
S16C20C thru S16C200C
REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 16.0 Amperes
.055(1.4) .043(1.1)
.026(0.68) .014(0.36)
FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic m
Compact Technology
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S16C30
SCHOTTKY BARRIER RECTIFIERS(16A/30-60V)MOSPEC
S16C30 thru S16C60
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification
Mospec Semiconductor
PDF