S-LSI1013LT1G
LRC
P-Channel 1.8-V (G-S) MOSFETLESHAN RADIO COMPANY, LTD.
P-Channel 1.8-V (G-S) MOSFET
LSI1013LT1G S-LSI1013LT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switch